Institute of Electrical Engineering, Slovak Academy of Sciences



Role in project

  • WP2 leader
  • MOCVD GaN material
  • “digital” GaN electronics


IEE plans to disseminate project outcomes via scientific conferences and workshops where IEE regularly participate, like the International Conference on Nitride Electronics, International Workshop on Nitrides, Topical Workshop on Heterostructure Technologies and Workshop on Compound Semiconductors and Devices. Finally, contribution to leading scientific journals like IEEE Electron Device Letters, Applied Physics Letters, Applied Physics Express, Journal of Applied Physics, etc is anticipated. IEE will supervise 2 students towards PhD and 2 MSc students. IEE will closely collaborate with FORTH on E/D GaN HEMT technology, transfer to industry is anticipated.

Nanomat Coordinator

Dr. Afshin Ziaei

Retour en haut